Concepedia

Silane controlled three dimensional GaN growth and recovery stages on a cone-shape nanoscale patterned sapphire substrate by MOCVD

J. Z. Li, Z. Z. Chen, Qianqian Jiao, Yulong Feng, Shuang Jiang, Y.F. Chen, Tongjun Yu, S. F. Li, G. Y. Zhang

CrystEngComm · 2015 · 18 citations · 24 references

DOI

Concepts

Abstract

The silane-controlled 3D growth led to a high crystalline quality, much strain relaxation and a specular surface for the GaN epilayers on NPSS.

References

24

Self-assembling GaN quantum dots on Al<i>x</i>Ga1−<i>x</i>N surfaces using a surfactant

Satoru Tanaka, Sohachi Iwai, Yoshinobu Aoyagi · Applied Physics Letters · 1996 · 274 citations

, , +17

Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials

David Zubía, S. D. Hersee · Journal of Applied Physics · 1999 · 245 citations

, , +17

Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

Yufeng Li, Mingwei Zhu, Liang Zhao et al. · Applied Physics Letters · 2011 · 201 citations

, , +17

Low-dislocation-density GaN from a single growth on a textured substrate

Carol I. H. Ashby, Christine C. Mitchell, Jung Han et al. · Applied Physics Letters · 2000 · 170 citations · Full text

, , +17

Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

Daniel Koleske, A. J. Fischer, Andrew A. Allerman et al. · Applied Physics Letters · 2002 · 127 citations

, , +17