Surface planarity and microstructure of low temperature silicon SEG and ELO

Model for facet and sidewall defect formation during selective epitaxial growth of (001) silicon

C.I. Drowley, Gillian Reid, R. Hull · Applied Physics Letters · 1988 · 71 citations

Natural Sciences, Materials Engineering, Materials Science +16

Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilane

J.L. Regolini, D. Bensahel, E. Scheid et al. · Applied Physics Letters · 1989 · 63 citations

Natural Sciences, Chemistry, Materials Science +16

Selective silicon epitaxial growth for device-isolation technology

Akihiko Ishitani, Hiroshi Kitajima, Kohetsu Tanno et al. · Microelectronic Engineering · 1986 · 52 citations

Engineering, Electrical Engineering, Materials Science +14

Facet Formation in Selective Silicon Epitaxial Growth

Akihiko Ishitani, Hiroshi Kitajima, Nobuhiro Endo et al. · Japanese Journal of Applied Physics · 1985 · 34 citations

Engineering, Materials Engineering, Materials Science +17