John Borland

Ion beams in silicon processing and characterization

Eric Chason, S. T. Picraux, J. M. Poate et al. · Journal of Applied Physics · 1997 · 271 citations

Materials Engineering, Electrical Engineering, Ion Implantation +12

Properties of chemical-vapor-deposited titanium nitride

J.B. Price, John Borland, S. C. Selbrede · Thin Solid Films · 1993 · 84 citations

Materials Engineering, Materials Science, Engineering +3

Low Temperature Shallow Junction Formation For 70nm Technology Node And Beyond

John Borland · MRS Proceedings · 2002 · 20 citations

Technology Node, Electrical Engineering, Engineering +8

Cluster Ion Implantation System: Claris for Beyond 45nm Device Fabrication (Ii)

Masayasu Tanjyo, Nariaki Hamamoto, Tsutomu Nagayama et al. · ECS Transactions · 2009 · 16 citations

Engineering, Device Fabrication, Ion Implantation +17

Novel device structures by selective epitaxial growth (SEG)

John Borland · 1987 · 12 citations

Materials Science, Single Crystal Silicon, Electrical Engineering +13