Tsutomu Nagayama

Analytical Model for Redistribution Profile of Ion-Implanted Impurities During Solid-Phase Epitaxy

Kunihiro Suzuki, Yuji Kataoka, Susumu Nagayama et al. · IEEE Transactions on Electron Devices · 2007 · 45 citations

Materials Science, Electrical Engineering, Ion Implantation +15

Planar Distributed Full-Tensor Anisotropic Metamaterials for Transformation Electromagnetics

Tsutomu Nagayama, Atsushi Sanada · IEEE Transactions on Microwave Theory and Techniques · 2015 · 40 citations · Full text

Engineering, Physics, Negative-index Metamaterial +11

The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles

Ryota Wada, Tsutomu Nagayama, N. Tokoro et al. · Japanese Journal of Applied Physics · 2021 · 23 citations

Electrical Engineering, Dopant Ions, Engineering +10

Monte Carlo Simulation of Ion Implantation Profiles Calibrated for Various Ions over Wide Energy Range

Kunihiro Suzuki, Yoko Tada, Yuji Kataoka et al. · JSTS Journal of Semiconductor Technology and Science · 2009 · 21 citations

Various Ions, Engineering, Monte Carlo Methods +16

Cluster Ion Implantation System: Claris for Beyond 45nm Device Fabrication (Ii)

Masayasu Tanjyo, Nariaki Hamamoto, Tsutomu Nagayama et al. · ECS Transactions · 2009 · 16 citations

Engineering, Device Fabrication, Ion Implantation +17