Cluster Ion Implantation System: Claris for Beyond 45nm Device Fabrication (Ii)

Abstract

Newly developed sweep beam Cluster ion implanter: CLARIS with 0.2-7keV energy range for Boron beam and 1-10keV energy range for Carbon beam is introduced. Novel Cluster ion implantation technology is capable for 45nm beyond device requiring USJ formation (<15nm) with high retain dose (>70%) and low sheet resistivity (<1200Ω/sq). Comparison of retain dose and sheet resistivity of B18, BF2, and B beams with FLA shows the superiority of the B18 implantation for less than 500eV implantation.