A study on the comparison of CMP performance between a novel alkaline slurry and a commercial slurry for barrier removal

Mechanism of Copper Removal during CMP in Acidic H[sub 2]O[sub 2] Slurry

T. Du, Dnyanesh Tamboli, V. Desai et al. · Journal of The Electrochemical Society · 2004 · 101 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Chemical–mechanical polishing of copper in alkaline media

Qiuliang Luo, Daniel Campbell, S. V. Babu · Thin Solid Films · 1997 · 89 citations

Engineering, Materials Engineering, Materials Science +12

Dependency of dishing on polish time and slurry chemistry in Cu CMP

Việt Hùng Nguyễn, H VanKranenburg, P.H. Woerlee · Microelectronic Engineering · 2000 · 64 citations

Engineering, Materials Engineering, Materials Science +8

Polishing mechanism of tantalum films by SiO2 particles

A. G. Vijaya Kumar, T. Du, Kalpathy B. Sundaram et al. · Microelectronic Engineering · 2003 · 43 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +9

Electrochemical characterization of surface complexes formed on Cu and Ta in succinic acid based solutions used for chemical mechanical planarization

C. M. Sulyma, D. Roy · Applied Surface Science · 2009 · 42 citations

Natural Sciences, Chemistry, Materials Science +17