2009 · 66 citations · 12 references
Non-volatile MemoryEngineeringMemory DesignMeasurementEmerging Memory TechnologyComputer ArchitecturePhase Change MemoryComputer MemoryReliability EngineeringStorage SystemsMemoryPcm TechnologiesMemory DeviceMemory DevicesPhase-change MemoryReliability CharacterizationReliabilityElectrical EngineeringHardware ReliabilityElectronic MemoryComputer EngineeringNm Pcm TechnologyMemory ReliabilityResistive Random-access Memory
Phase Change Memory (PCM) has emerged as an attractive candidate for next-generation non-volatile memory devices. For these applications, reliability is determined by the ability to retain the state of data in the device and support a specified number of re-writes without failure. In PCM technologies, retention is limited by the meta-stable amorphous state of the cell. For cycling endurance (re-writes), failure occurs due to either void formation in the active material or contamination of the heating element of the cell. With optimized process integration and cell programming, large array devices based on a 90 nm PCM technology are able to support data retention to 10 years at 85°C and greater than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> write cycles.
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R. Bez, E. Camerlenghi, Alberto Modelli et al. · Proceedings of the IEEE · 2003 · 806 citations
Hardware Security, Non-volatile Memory, Electrical Engineering +13
Reliability investigations for manufacturable high density PRAM
Su Jin Ahn · 2005 · 132 citations