IEEE Electron Device Letters · 1988 · 44 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesPhotodetectorsSemiconductor DetectorsSemiconductor Device MaterialsAvalanche PhotodiodesDynamic RangeIndium PhosphideIntegrated PhotodetectorsP-i-n PhotodetectorsPhotodetectionPhotodiodesReceiver Sensitivity
A monolithically integrated p-i-n FET amplifier, fabricated using ion-planted indium-phosphide (InP) JFETs, is described. The vertically integrated structure consists of a vapor-phase epitaxy (VPE)-grown InGaAs photoabsorption layer and a metal-organic-chemical-vapor-disposition (MOCVD)-grown Fe-doped semi-insulating layer. A Zn diffusion was performed to complete the p-i-n photodiode. High-performance fully implanted InP JFETS were used to form the integrated amplifier with a symmetrical design to remove the DC offset. With a receiver sensitivity of -36.4 dBm measured at 200 Mb/s NRZ for 10/sup -9/ BER, it is thought to be the most sensitive monolithic p-i-n FET preamp yet reported in this frequency range. The p-i-n amplifier has a dynamic range of 15 dB.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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