Electrochemical and Solid-State Letters · 2009 · 15 citations · 15 references
Natural SciencesElectrical EngineeringMaterials ScienceElectrochemistryElectronic MaterialsMicroelectronicsDielectric MaterialsDielectric PropertiesDielectricsMetal OxidesMetalsThin Film Electrical PropertiesCapacitanceCapacitor DielectricsCeramic DielectricsLeakageMetal Oxide ElectrodesNonlinear Dielectric ResponseOxide Dielectrics
In this article, we describe our successful fabrication of a metal–insulator–metal (MIM) capacitor with a low voltage nonlinearity. A low leakage current of at and a small were obtained at a high density for a MIM capacitor. The small for a thick dielectric was much better than the reported dielectrics of , , and at a similar κ-value (15–20). The good analog performance was due to the combined effect of the dielectric and the high work-function metals.
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Point defects in HfO2 high K gate oxide
K. Xiong, John Robertson · Microelectronic Engineering · 2005 · 105 citations
Natural Sciences, Materials Engineering, Materials Science +13