IEEE Electron Device Letters · 1988 · 32 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIntegrated Circuit FabricationMicrowave Integrated CircuitsMicrowave OscillatorsRadio-frequency Integrated CircuitsSemiconductor HeterostructuresGaas Microwave Integrated CircuitsGaas OscillatorsHeterojunction Bipolar TransistorsHigh-frequency ElectronicsMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit Power DividersMonolithic Microwave Integrated CircuitsSelf-aligned Structures
A self-aligned HBT (heterojunction bipolar transistor) technology using polymide for insulating the emitter contact from the base contact is described. A 1- mu m emitter-width HBT with maximum oscillation frequency of 86 GHz was successfully fabricated. This processing was also applied to fabricate frequency-divider ICs. An operating frequency of 18 GHz was obtained with good reproducibility.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
5
22 GHz 1/4 frequency divider using AlGaAs/GaAs HBTs
Y. Yamauchi, Koichi Nagata, O. Nakajima et al. · Electronics Letters · 1987 · 32 citations