Gaas Oscillators
GaAs Oscillator is a semiconductor-based microwave oscillator that utilizes gallium arsenide (GaAs) technology to achieve high-frequency operation and enhanced electron mobility compared to oscillators based on conventional semiconductor materials.
358
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12K
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1K
Authors
231
Institutions
Publications per year
2017–2026
10
Variants
Gallium Arsenide Oscillators
Parents
358
Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 796 citations
Engineering, Electrical Engineering, Electronic Materials +16
Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodes
E. R. Brown, T. C. L. G. Sollner, C. D. Parker et al. · Applied Physics Letters · 1989 · 308 citations
Optical parametric oscillation in quasi-phase-matched GaAs
K. L. Vodopyanov, Ofer Levi, Paulina S. Kuo et al. · Optics Letters · 2004 · 212 citations
High Frequency GaAs Nano-Optomechanical Disk Resonator
Lu Ding, Christopher G. Baker, P. Senellart et al. · Physical Review Letters · 2010 · 189 citations · Full text
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231
Texas Instruments (United States)
Dallas, United States
14 h-index
46 publications
883 citations
NTT (Japan)
Tokyo, Japan
11 h-index
34 publications
1.1K citations
NTT Basic Research Laboratories
Atsugi, Japan
8 h-index
32 publications
1.2K citations
RTX (United States)
Arlington, United States
7 h-index
19 publications
958 citations

Centre National de la Recherche Scientifique
Paris, France
7 h-index
41 publications
2.5K citations
RCA (United States)
New York, United States
7 h-index
12 publications
300 citations
University of Regensburg
Regensburg, Germany
7 h-index
42 publications
2.3K citations
Fujitsu (Japan)
Kawasaki, Japan
6 h-index
21 publications
355 citations
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55 publications · 2.3K citations
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33 publications · 2.4K citations
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42 publications · 745 citations
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30 publications · 976 citations
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13 publications · 363 citations
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