Polysilicon emitters for silicon concentrator solar cells

Abstract

Polysilicon emitters with a thermally grown interfacial oxide are examined in great detail. Both J/sub o/ and p/sub c/ are measured for the polysilicon emitter (contact) which is annealed under various conditions. J/sub o/ <or=5*10/sup -14/ A/cm/sup 2/ and p/sub c/ approximately 1*10/sup -5/ Omega -cm/sup 2/ are obtained for n- and p-type polysilicon emitters. The results also indicate that the interfacial oxide is only broken by a very small fraction in order to have p/sub c/ approximately 1*10/sup -5/ Omega -cm/sup 2/. Under such condition, J/sub o/ is primarily dominated by the recombination at the oxide interface.<<ETX>>