Imaging and strain analysis of nano-scale SiGe structures by tip-enhanced Raman spectroscopy

The Raman effect in crystals

R. Loudon · Advances In Physics · 1964 · 2.4K citations

Natural Sciences, Materials Science, Physics +12

Nanoscale chemical analysis by tip-enhanced Raman spectroscopy

Raoul M. Stöckle, Yung Doug Suh, Volker Deckert et al. · Chemical Physics Letters · 2000 · 1.6K citations

Natural Sciences, Chemistry, Materials Science +14

Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys

Massimo V. Fischetti, S.E. Laux · Journal of Applied Physics · 1996 · 1.5K citations

Natural Sciences, Materials Science, Physics +17

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

Minjoo Larry Lee, Eugene A. Fitzgerald, Mayank T. Bulsara et al. · Journal of Applied Physics · 2004 · 957 citations

Engineering, Electrical Engineering, Materials Science +17

Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors

Yubing Sun, Scott E. Thompson, Toshikazu Nishida · Journal of Applied Physics · 2007 · 511 citations

Engineering, Materials Science, Physics +17