Synthesis and Evaluation of Pure-Silica-Zeolite BEA as Low Dielectric Constant Material for Microprocessors

Abstract

Pure-silica-zeolite (PSZ) BEA film was prepared on stainless steel substrates by in situ crystallization at 130 °C for 14 days using a gel composition of 0.6:0.6:1:9.8 (TEA)OH−HF−SiO 2 −H 2 O. The film is polycrystalline, continuous, and about 15 μm thick. The film was characterized by X-ray diffraction (XRD), thermogravimetric analysis (TGA), inductively coupled plasma−atomic emission spectrometry (ICP−AES), Fourier transform infrared spectroscopy (FT-IR), and scanning electron microscopy (SEM). The as-synthesized film was also measured for the first time for dielectric constant ( k ), and a k value of 2.3 was obtained.