Power electronics with wide bandgap materials: Toward greener, more efficient technologies

The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

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Global Energy Scenario and Impact of Power Electronics in 21st Century

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Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

Hajime Okumura · Japanese Journal of Applied Physics · 2006 · 329 citations

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Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

Qi Dai, M. Schubert, M. H. Kim et al. · Applied Physics Letters · 2009 · 277 citations · Full text

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SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles

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