Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching

Abstract

A new approach of self-compliance bipolar switching of tantalum embedded amorphous oxide for highly reliable and uniform switching was investigated. Based on analytic results, the formation of a metallic tantalum embedded amorphous oxide film was confirmed. Robust characteristics of over cycles with no change at both resistance states under voltage pulses were achieved due to the self-compliance function, which originated from the limitation of current by metallic ohmic load resistance. In addition, an oxygen plasma pulse method for interface oxidation was demonstrated.