Ji‐Hyun Hur - Concepedia

Author

Ji‐Hyun Hur

Korea University ORCID

Also Known As

Hur, Jihyun, Ji-Hyun Hur, Jihyun Hur, Ji‐Hyun Hur

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Korea University Sejong University Samsung (South Korea)Korea Advanced Institute of Science and Technology Inha Technical College

About

Ji‐Hyun Hur is an author at Korea University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	21	730
2	Applied Physics	15	21	730
3	Chemistry	3	3	67
4	Chemical Engineering	2	2	67
5	Computer Engineering	1	1	14

Ji‐Hyun Hur

Publications

966

Citations

H-Index

Page 1

	Year	Citations
A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory Myoung‐Jae Lee, Dongsoo Lee, Seong‐Ho Cho, Nature Communications Stackable Scalable 3DNon-volatile MemoryEngineeringPhysicsNanotechnology	2013	158
Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching Chang Bum Lee, Dong Soo Lee, Anass Benayad, IEEE Electron Device Letters Materials ScienceMaterials EngineeringElectrical EngineeringMaterial AnalysisEngineering	2011	76
Modeling for multilevel switching in oxide-based bipolar resistive memory Ji‐Hyun Hur, Kyung Min Kim, Man Chang, Nanotechnology	2012	57
Resistive Switching in Solution-Processed Copper Oxide (Cu<i><sub>x</sub></i>O) by Stoichiometry Tuning Shania Rehman, Ji‐Hyun Hur, Deok‐kee Kim The Journal of Physical Chemistry C EngineeringThin Film Process TechnologyPhase Change MemoryChemical EngineeringSolution-processed Copper Oxide	2018	53
Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light Shania Rehman, Honggyun Kim, Muhammad Farooq Khan, Journal of Alloys and Compounds Graphene NanomeshesElectrical EngineeringSchottky Barrier HeightEngineeringGraphene Quantum Dot	2020	53
Tuning of ionic mobility to improve the resistive switching behavior of Zn-doped CeO2 Shania Rehman, Honggyun Kim, Muhammad Farooq Khan, Scientific Reports	2019	44
Electrical stress-induced instability of amorphous indium-gallium-zinc oxide thin-film transistors under bipolar ac stress Sang‐Won Lee, Kichan Jeon, Jun‐Hyun Park, Applied Physics Letters Materials ScienceBipolar Ac StressElectrical EngineeringElectrical Stress-induced InstabilityEngineering	2009	42
180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications Sanghun Jeon, Sungho Park, Ihun Song, EngineeringOptoelectronic DevicesIntegrated CircuitsImage SensorSemiconductor Device	2010	41
The Influence of Hydrogen on Defects of In–Ga–Zn–O Semiconductor Thin-Film Transistors With Atomic-Layer Deposition of Al<sub>2</sub>O<sub>3</sub> Taeho Kim, Yunyong Nam, Ji‐Hyun Hur, IEEE Electron Device Letters SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	2016	41
First principles study of oxygen vacancy states in monoclinic ZrO2: Interpretation of conduction characteristics Ji‐Hyun Hur, Seongjun Park, U‐In Chung Journal of Applied Physics Materials ScienceSolid-state IonicIi-vi SemiconductorTransition Metal ChalcogenidesMonoclinic Zro2	2012	36

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