IEEE Photonics Technology Letters · 1993 · 16 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser PhysicsQuantum Well DevicesQuantum WellsSemiconductor LasersStrain AnalysisStrain EngineeringBiaxial StrainLow-threshold Current LasersQuantum Well HeterostructuresQuantum Well LasersQuantum Well StructuresStrain EffectsStrained Quantum WellsThreshold Behavior
A study of the effects of biaxial strain on the performance of low-threshold 1.3- mu m In/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y//InP quantum-well lasers is presented. Lasers with lattice-matched, compressive-strained, and tensile-strained quantum-wells were fabricated to compare the effect of strain on various device parameters. Threshold current densities as low as 187 A/cm/sup 2/ for a two-quantum-well device with 0.85% compressive strain were obtained.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A. Kasukawa, I. J. Murgatroyd, Y. Imajo et al. · Japanese Journal of Applied Physics · 1989 · 32 citations