I. J. Murgatroyd

Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1−<i>y</i>Sb<i>y</i> layers: Possible relationship to surface reconstruction occurring during layer growth

I. J. Murgatroyd, Andrew G. Norman, G. R. Booker · Journal of Applied Physics · 1990 · 94 citations

Semiconductors, Materials Science, Possible Relationship +15

High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes

A. Kasukawa, I. J. Murgatroyd, Y. Imajo et al. · Japanese Journal of Applied Physics · 1989 · 32 citations

Semiconductor Technology, Photonics, Low Internal Loss +13

Growth of strained layer superlattices. II

G. R. Booker, P. C. Klipstein, M. Lakrimi et al. · Journal of Crystal Growth · 1995 · 26 citations

Materials Engineering, Materials Science, Engineering +4

Growth of strained layer superlattices by MOVPE III. Use of UV absorption to monitor alkyl stability in the reactor

G. R. Booker, Morgan Daly, P. C. Klipstein et al. · Journal of Crystal Growth · 1997 · 21 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +10

1.5 µm GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRINSCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD)

A. Kasukawa, I. J. Murgatroyd, Y. Imajo et al. · Electronics Letters · 1989 · 20 citations

Engineering, Laser Applications, Laser Material +19