Y. Imajo

GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode

Y. Imajo, A. Kasukawa, S. Kashiwa et al. · Japanese Journal of Applied Physics · 1990 · 42 citations

Engineering, Materials Engineering, Materials Science +16

1.3 μm InAs<i>y</i>P1−<i>y</i>/InP strained-layer quantum well laser diodes grown by metalorganic chemical vapor deposition

Y. Imajo, A. Kasukawa, T. Namegaya et al. · Applied Physics Letters · 1992 · 39 citations

Engineering, Materials Engineering, Materials Science +17

High Quantum Efficiency, High Output Power 1.3 µm GaInAsP Buried Graded-Index Separate-Confinement-Heterostructure Multiple Quantum Well (GRIN-SCH-MQW) Laser Diodes

A. Kasukawa, I. J. Murgatroyd, Y. Imajo et al. · Japanese Journal of Applied Physics · 1989 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

1.3μm GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)

A. Kasukawa, Y. Imajo, T. Makino · Electronics Letters · 1989 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

1.5 µm GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRINSCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD)

A. Kasukawa, I. J. Murgatroyd, Y. Imajo et al. · Electronics Letters · 1989 · 20 citations

Engineering, Electrical Engineering, Materials Science +17