Concepedia

T. Namegaya

TN

Statistics

Publications

8

Citations

217

H-Index

8

Active since

1989

Affiliations

Furukawa Electric (Japan)(Current)

T. Namegaya is an author at Furukawa Electric (Japan) specializing in semiconductor lasers, engineering, and optoelectronics.

Publications per year

1989–1994

8

Publications

8

High temperature operation of 1.3 μm GaInAsP/Inp GRINSCH strained-layer quantum well lasers

T. Namegaya, A. Kasukawa, N. Iwai et al. · Electronics Letters · 1993 · 42 citations

Engineering, Electrical Engineering, Materials Science +17

1.3 μm InAs<i>y</i>P1−<i>y</i>/InP strained-layer quantum well laser diodes grown by metalorganic chemical vapor deposition

Y. Imajo, A. Kasukawa, T. Namegaya et al. · Applied Physics Letters · 1992 · 39 citations

Engineering, Materials Engineering, Materials Science +17

Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers

T. Namegaya, N. Matsumoto, N. Yamanaka et al. · IEEE Journal of Quantum Electronics · 1994 · 37 citations

Engineering, Electrical Engineering, Materials Science +17

1.3 mu m InAs/sub y/P/sub 1/-/sub /y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

A. Kasukawa, T. Namegaya, T. Fukushima et al. · IEEE Journal of Quantum Electronics · 1993 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

1.5 µm GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRINSCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD)

A. Kasukawa, I. J. Murgatroyd, Y. Imajo et al. · Electronics Letters · 1989 · 20 citations

Engineering, Electrical Engineering, Materials Science +17

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