1.3μm GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well (BH-GRIN-SC-MQW) lasers entirely grown by metalorganic chemical vapour deposition (MOCVD)

Abstract

We report the first successful demonstration of a 1.3 μm GaInAsP/InP buried heterostructure graded index separate confinement multiple quantum well laser (BH-GRIN-SCMQW LD) entirely grown by three-step low pressure metalorganic chemical vapour deposition (LP-MOCVD). The threshold current and the differential quantum efficiency were 31 mA (threshold current density 3.4kA/cm2) and 28%/facet, respectively. A characteristic temperature of 65 K was obtained.