A. Kurobe - Concepedia

Author

A. Kurobe

Toshiba (Japan)ORCID

Also Known As

A Kurobe, A. Kurobe, ATSUSHI KUROBE, Atsushi KUROBE, Atsushi Kurobe

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

Toshiba (Japan)The University of Tokyo Toshiba (United Kingdom)University of Cambridge Cavendish Hospital

About

A. Kurobe is an author at Toshiba (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	32	1.4K
2	Applied Physics	18	29	1.4K
3	Electrical Engineering	16	23	839
4	Natural Sciences	10	10	386
5	Computer Engineering	3	3	110

A. Kurobe

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers P.M. Ilroy, A. Kurobe, Yuki Uematsu IEEE Journal of Quantum Electronics EngineeringLaser ScienceLaser ApplicationsLaser PhysicsMqw Lasers	1985	281
Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology Tomohisa Mizuno, Shinichi Takagi, Naoharu Sugiyama, IEEE Electron Device Letters Materials EngineeringSimox TechnologyElectrical EngineeringStrained-si MosfetEngineering	2000	202
Correlation Effects on Variable Range Hopping Conduction and the Magnetoresistance A. Kurobe, Hiroshi Kamimura Journal of the Physical Society of Japan EngineeringVariable Range HoppingMagnetic ResonanceMagnetic MaterialsMagnetoresistance	1982	147
Voltage-control spintronics memory (VoCSM) having potentials of ultra-low energy-consumption and high-density H. Yoda, N. Shimomura, Y. Ohsawa, Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture	2016	71
Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers A. Kurobe, Hideto Furuyama, Shigeya Naritsuka, IEEE Journal of Quantum Electronics Wide-bandgap SemiconductorEngineeringLaser ScienceLaser ApplicationsLaser Material	1988	62
Band filling in GaAs/AlGaAs multiquantum well lasers and its effect on the threshold current Rakhakrishnan Nagarajan, Toshio Kamiya, A. Kurobe IEEE Journal of Quantum Electronics Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Physics	1989	54
Advanced SOI p-MOSFETs with strained-Si channel on SiGe-on-insulator substrate fabricated by SIMOX technology Tomohisa Mizuno, Naoharu Sugiyama, A. Kurobe, IEEE Transactions on Electron Devices Materials EngineeringSimox TechnologyElectrical EngineeringEngineeringNanoelectronics	2001	54
Wave functions and Fermi surfaces of strongly coupled two-dimensional electron gases investigated by in-plane magnetoresistance A. Kurobe, I. M. Castleton, E. H. Linfield, Physical review. B, Condensed matter In-plane MagnetoresistanceEngineeringFermi SurfacesMagnetoresistanceMagnetism	1994	53
Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height T. Inokuchi, H. Yoda, Yushi Kato, Applied Physics Letters Spin TorqueMagnetic PropertiesNon-volatile MemoryEngineeringHybrid Writing Scheme	2017	41
The effect of conduction band non-parabolicity on inter-sub-band absorption in doped quantum wells D.J. Newson, A. Kurobe Semiconductor Science and Technology SemiconductorsQuantum ScienceElectrical EngineeringConduction Band Non-parabolicityEngineering	1988	37

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