2002 · 10 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesBandwidthGallium Nitride (Gan) MaterialsGallium Nitride Power AmplifiersGan-based High-frequency DevicesMicrowave Amplifier DesignPower Amplifier DesignPower OutputRadio Frequency Power Amplifiers
We report lumped power amplifiers with >4.4 W saturated output power over 2-8 GHz bandwidth in a GaN HEMT technology. Peak output power and PAE are 5.12 W and 21% respectively at 6 GHz, under class-A operation. Also reported are GaAs MESFET/GaN HEMT cascode distributed amplifiers with 1-9 GHz bandwidth and with peak output power and PAE of 1.35 W and 14% respectively at 8 GHz.
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High performance and large area flip-chip bonded AlGaN/GaN MODFETs
B.J. Thibeault, B.P. Keller, P. Fini et al. · 2002 · 25 citations
Capacitively coupled traveling-wave power amplifier
Y. Ayasli, S.W. Miller, R. Mozzi et al. · IEEE Transactions on Electron Devices · 1984 · 14 citations