IEEE Electron Device Letters · 2003 · 45 citations · 10 references
Electrical EngineeringEngineeringUndesirable SnapbackAnode StructureNanoelectronicsElectronic EngineeringBias Temperature InstabilityCdmos ProcessPower DeviceFast SwitchingEnergy StorageMicroelectronicsSemiconductor Device
An ultrafast low energy loss lateral insulated gate bipolar transistor (LIGBT) with a novel segmented anode structure is demonstrated. The anode comprises segments of p/sup +/ and n/sup +//p (n/sup +/ region formed within a p-type region) along the width of the device. By simply varying the ratio of these segments the tradeoff between conduction and switching losses can be varied. Unlike an anode shorted structure this does not exhibit an undesirable snapback in its on-state characteristics. This structure is simple to realize in a CDMOS process without the need for any additional process steps.
10
High voltage thin layer devices (RESURF devices)
J.A. Appels, H.M.J. Vaes · 1979 · 517 citations
Electrical Engineering, Unusual Diode Structure, Engineering +12
Fast switching lateral insulated gate transistor
P.A. Gough, M. Simpson, V. Rumennik · 1986 · 76 citations
Device Modeling, Electrical Engineering, Electronic Devices +15