<i>npn</i> controlled lateral insulated gate bipolartransistor

Abstract

A fast switching npn controlled lateral insulated gate bipolar transistor (NC-LIGBT) suitable for high voltage integrated circuits is proposed. An open base npn transistor incorporated within the device strongly influences its on-state and switching behaviour. Further, by varying the ratio between n+/p+ regions or the concentration of the p well at the anode end, a suitable tradeoff between forward drop and turn-off time can be easily realised by this single gated device.