Journal of Electrical Engineering and Technology · 2014 · 10 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceComputational Materials ScienceElectronic MaterialsSemiconductor DevicesDevice ModelingDevice SimulationMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsSemiconductor ReliabilityShort-channel EffectsElectrostatic Surface PotentialField-effect Transistor SimulationGate-all-around TransistorsMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingSurface Effect ModelingSurface PotentialSurface Potential Analysis
In the proposed work a 2D analytical modeling of single halo Triple material Surrounding Gate (SH-TMSG) MOSFET is developed. The Surface potential and Electric Field has been derived using parabolic approximation method and the simulation results are analyzed. The essential substantive is provided which elicits the deterioration of short channel effects and the results of the analytical model are delineated and compared with MEDICI simulation results and it is well corroborated.
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Jean-Pierre Colinge · Solid-State Electronics · 2004 · 936 citations
Murray R. Spiegel · Mathematics Magazine · 1981 · 314 citations