IEEE Transactions on Nuclear Science · 2002 · 50 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportCharge Carrier TransportDevice CharacterizationDevice ModelingElectronic Transport ModelingSemiconductor DetectorsCarrier Lifetime MeasurementCarrier Mobility ExtractionCarrier Mobility ModelingCarrier Mobility-lifetime ProductCarrier Transport ModelingCharge InductionCharge TransportMobility Extraction
In order to characterize CdTe/CdZnTe detectors in a planar configuration, we have developed a new method to extract /spl mu//spl tau/ products. In this method, we prepare an analytic spectral model based on the charge transport properties in the device, which is intended to be used in fitting calculation. The low mobility-lifetime (/spl mu//spl tau/) products of carriers in CdTe/CdZnTe detectors produce a position dependency in the charge induction efficiency. The model takes the induction efficiency and interaction positions of photons into account. Since the model is parameterized by /spl mu//spl tau/ products, it can extract /spl mu//spl tau/ products. Here, we demonstrate how the model works based on the results from 2-mm-thick HPB CdZnTe and THM CdTe detectors.
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