P. Fougères

CdTe and Cd1−Zn Te for nuclear detectors: facts and fictions

P. Fougères, P. Siffert, M. Hage‐Ali et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1999 · 88 citations

Radiation effects on II–VI compound-based detectors

A. Cavallini, Beatrice Fraboni, W. Dusi et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2002 · 51 citations

Engineering, Radiation Detection, Detector Physic +6

Electric field distribution in CdTe and Cd1−xZnxTe nuclear detectors

A. Zumbiehl, M. Hage‐Ali, P. Fougères et al. · Journal of Crystal Growth · 1999 · 50 citations

Electrical Engineering, Electric Field Distribution, Radiation Detection +4

Annealing effects on defect levels of CdTe:Cl materials and the uniformity of the electrical properties

M. Ayoub, M. Hage‐Ali, J.M. Koebel et al. · IEEE Transactions on Nuclear Science · 2003 · 46 citations

Engineering, Crystal Growth Technology, Defect Tolerance +17

Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation

L. Mollard, G. Destéfanis, N. Baier et al. · Journal of Electronic Materials · 2009 · 44 citations

Ion Implantation, Arsenic Ion Implantation, Semiconductor Device Fabrication +2