IEEE Transactions on Electron Devices · 2002 · 26 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceMaterials CharacterizationMicroelectronicsThin FilmsDevice CharacterizationMos CapacitorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesThin-film MaterialsCapacitanceCapacitance-voltage CharacteristicsCapacitance-voltage CharacterizationCapacitance-voltage MeasurementsEquivalent Oxide ThicknessOxide Thickness MeasurementThin Oxide FilmsThin Oxide Layers
In this letter, a novel and simple method to determine deep ultrathin oxide thickness by measuring the MOS capacitance under the flat-band condition is reported. The mechanism of this method has been profoundly studied. The results determined by this method show good agreement with those using capacitance-voltage (C-V) simulation, ellipsometer, and high-resolution transmission electromicroscopy (HRTM) analysis for thin oxides (2/spl sim/3 nm). The thickness of pure oxide extracted by this method in this experiment can be down to 1.4 nm despite the obvious C-V distortion.
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1.5 nm direct-tunneling gate oxide Si MOSFET's
H. Sasaki, Mizuki Ono, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1996 · 346 citations