Publication | Open Access
IBM 193nm Semiconductor Resist: Material Properties, Resist Characteristics and Lithographic Performance.
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1999
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EngineeringIbm 193NmLithographic PerformanceResolution CapabilitiesPositive ResistSemiconductor ResistSemiconductor DeviceSemiconductorsResistorOptical PropertiesMaterials ScienceSemiconductor TechnologyElectrical EngineeringSemiconductor MaterialSemiconductor Device FabricationMicroelectronicsPlasma EtchingOptical Absorption PropertiesSpecific ResistanceApplied PhysicsOptoelectronics
Using substituted poly(norbornenes), we have developed an etch-resistant, high resolution single layer 193nm positive resist. This paper describes the optical absorption properties, oxide-etch characteristics and resolution capabilities of such a first generation IBM resist.