GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation

GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

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Materials Science, Photonics, Electrical Engineering +13

Electronic Properties of Ga(In)NAs Alloys

I. A. Buyanova, Weimin Chen, B. Ḿonemar · MRS Internet Journal of Nitride Semiconductor Research · 2001 · 183 citations · Full text

Long-wavelength vertical-cavity lasers and amplifiers

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Photonics, Optical Materials, Engineering +14

Optical properties of GaNAs and GaInAsN quantum wells

Richard J. Potter, N. Balkan · Journal of Physics Condensed Matter · 2004 · 62 citations

Wide-bandgap Semiconductor, Phonon Energy, Photoluminescence +12

1.3-μm vertical-cavity amplifier

E.S. Björlin, B. Riou, Adrian Keating et al. · IEEE Photonics Technology Letters · 2000 · 23 citations

Photonics, Reflection Mode, Engineering +12