2005 · 28 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingIii-v SemiconductorsIntegrated Circuit DesignSemiconductor Device MaterialsPower Electronics DevicesSchottky Barrier DiodesSilicon Thin FilmsThin Oxide LayersTransistors For Power ConversionVoltage Drop Analysis
High voltage DI LIGBTs using the RESURF principle have been fabricated in thin silicon layers. Their electrical characteristics are compared to JI-LIGBTs simultaneously fabricated in silicon epi-layers. Three LIGBT structures were examined, namely, the conventional LIGBT, the collector-shorted LIGBT, and the hybrid Schottky LIGBT. The forward voltage drop of all three structures in DI was found to be slightly higher than that of the corresponding structure in JI. However, the DI devices were observed to be faster by an order of magnitude than JI. In addition, a shorter turn-on pulse has been found to decrease the turn-off time for both DI and JI devices.
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Analysis of the lateral insulated gate transistor
M. Simpson, P.A. Gough, F. I. Hshieh et al. · 1985 · 44 citations