2005 · 25 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesBipolar Junction TransistorsIii-v SemiconductorsIntegrated Circuit DesignIntegrated Circuit DevicesThree-phase CircuitsWide-bandgap Semiconductor DevicesSchottky Barrier DiodesSchottky BarriersSchottky ContactsSemiconductor JunctionsThree-phase Inverters
Structure of a high speed, high current capacity Latelal Insulated Gate Bipolar Transistor (LIGBT) and a diode for a 250V1A monolithic three-phase inverter IC are studied. A hybrid structure between Schottky junctions and pn junctions is effective for the diode, but not for the LIGBT. Characteristics of the IC using the LIGBT and diode are also presented.
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Analysis of the lateral insulated gate transistor
M. Simpson, P.A. Gough, F. I. Hshieh et al. · 1985 · 44 citations