IEEE Electron Device Letters · 2011 · 60 citations · 7 references
The forming stage characteristics of electrochemical-metallization resistive-switching-random-access-memory cells are studied with an improved kinetic Monte Carlo simulator. The filament topographies obtained at different forming voltage levels and the relationship between forming time and filament topographies are investigated in detail. The so-called “voltage-time dilemma” is simulated and studied. In addition, the various chemical and physical processes that produce these results are discussed. Finally, the simulated pattern is compared with experiments conducted on Cu/H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O and Ag/Ag <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> S systems.
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Christina Schindler, G. Staikov, Rainer Waser · Applied Physics Letters · 2009 · 306 citations
Voltage-time Dilemma, Electrical Engineering, Exponential Dependence +15
Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device
Qi Liu, Chunmeng Dou, Yan Wang et al. · Applied Physics Letters · 2009 · 117 citations
Materials Science, Materials Engineering, Electrical Engineering +15