Resistance switching of Cu/SiO2 memory cells studied under voltage and current-driven modes

Abstract

Resistance switching in Cu/SiO2-based conductive-bridging random access memories is studied under voltage and current-driven modes. These two modes are used to study memory cycling and time-dependent switching. Voltage-current (V-I) cycles (logarithmic current ramp) are compared to I-V cycles (linear voltage ramp). The Off-On transition in V-I cycles is governed by device capacitance. The Off-On switching time (in the 10−1–103 s range) was studied under constant voltage and constant current stresses. The switching time varies as exp(V0/V) and as 1/I. Switching kinetics is discussed considering a Fowler–Nordheim tunneling injection law and a field-induced nucleation theory.