Sub-10-nm-Scale Lithography Using<i>p</i>-chloromethyl-methoxy-calix[4]arene Resist

Abstract

We examined the properties of p-chloromethyl-methoxy-calix[4]arene (CMC4) as a high-resolution negative-tone resist for electron-beam (EB) lithography. CMC4's highest resolution was less than 8 nm, and of the calixarene resists studied so far, it has the highest solubility in Cl-free solvents. Comparison with the p-chloromethyl-methoxy-calix[6]arene (CMC6) resist revealed that the CMC4 resist's low molecular weight and low crystallinity were the origin of its high resolution and high solubility.