2008 · 44 citations · 4 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsFerroelectric MaterialsMemory DevicesMetal-oxide-semiconductor Field-effect TransistorsNanoelectronicsData RetentionEnduranceFlash MemoryFlash Memory DevicesLong-term Data RetentionMemory Circuit DesignNand Flash MemoryNon-volatile Memory Design
Characteristics of MFIS-type ferroelectric-gate FETs as a NAND flash memory cell are investigated. Lower voltage operations compared with floating-gate/MONOS NAND cells are realized. Excellent program and read disturb characteristics are presented. High endurance and long data retention results are also described. Due to the voltage-driven low-voltage and scalable properties, ferroelectric-gate FETs are most suitable for the sub- lOnm NAND flash memories.
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