2002 · 11 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyIii-v SemiconductorsMetal-oxide-semiconductor Field-effect TransistorsP-n JunctionsSemiconductor Device MaterialsSemiconductor InterfacesChannel Doping EffectsCmos Fabrication ProcessesComplementary Metal-oxide-semiconductor DesignGate Oxide InterfacesInterdiffusionJunction ResistanceP-type Oxide SemiconductorsProcess Technology Selection
A novel VDMOS structure, named poly flanked VDMOS (PFVDMOS), is proposed for the first time to provide a better performance and process technology for superjunction MOSFET devices. The structure contains a thin oxide barrier to eliminate the existing p-n lateral interdiffusion problem, thus both the n-epi and p poly column widths can be reduced to a minimum. This reduction in column width enables the device to have a much higher n-epi doping concentration. In a sense, it leads to an optimal reduction in on-state resistance compared to other existing structures for the same voltage rating.
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A new generation of high voltage MOSFETs breaks the limit line of silicon
Gerald Deboy, N. Marz, Josef Štengl et al. · 2002 · 402 citations
Engineering, Electrical Engineering, Electronic Materials +13
Experimental results and simulation analysis of 250 V super trench power MOSFET (STM)
T. Nitta, T. Minato, Maasa Yano et al. · 2002 · 47 citations