K.P. Gan

Oxide-bypassed VDMOS (OBVDMOS): an alternative to superjunction high voltage MOS power devices

Yung C. Liang, K.P. Gan, Ganesh S. Samudra · IEEE Electron Device Letters · 2001 · 68 citations

Electrical Engineering, Engineering, Nanoelectronics +10

120 V interdigitated-drain LDMOS (IDLDMOS) on SOI substrate breaking power LDMOS limit

Shuming Xu, K.P. Gan, Ganesh S. Samudra et al. · IEEE Transactions on Electron Devices · 2000 · 47 citations

Materials Science, Electrical Engineering, Engineering +12

A simple technology for superjunction device fabrication: polyflanked VDMOSFET

K.P. Gan, Xin Yang, Yung C. Liang et al. · IEEE Electron Device Letters · 2002 · 43 citations

Wide-bandgap Semiconductor, Electrical Engineering, Simple Technology +15

Tunable oxide-bypassed VDMOS (OBVDMOS): breaking the silicon limit for the second generation

Yung C. Liang, Xin Yang, Ganesh S. Samudra et al. · 2003 · 12 citations

Tunable Oxide-bypassed Vdmos, Electrical Engineering, Engineering +10

Poly flanked VDMOS (PFVDMOS): a superior technology for superjunction devices

K.P. Gan, Yung C. Liang, G.S. Samudra et al. · 2002 · 11 citations

Electrical Engineering, Superior Technology, Engineering +8