A device model for an ion-implanted MESFET

Abstract

A model is developed for an ion-implanted MESFET device in terms of the range and straggle parameters of the Gaussian profile. Reasonable approximations are introduced to obtain a closed-form solution for the linear and triode regions of operation. Simplified square-law approximations are obtained under certain conditions and the validity of these forms is discussed. The simplified expressions are compared with those of the MOSFET and parallels are drawn. Data are presented to confirm the dc results of the theory over a wide range of implant parameters and demonstrate the value of the model for computer-aided design applications.