Straggle Modeling
Straggle Modeling is a computational method in ion implantation that predicts the statistical spread of ion ranges in a material due to random collisions, distinguished from other implantation models by its focus on characterizing the variance and spatial distribution of implanted ion profiles around their average penetration depth.
24
Publications
751
Citations
73
Authors
38
Institutions
Publications per year
2017–2026
4
Parents
24
A device model for an ion-implanted MESFET
G.W. Taylor, H. M. Darley, R.C. Frye et al. · IEEE Transactions on Electron Devices · 1979 · 92 citations
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38
Vellore Institute of Technology University
Vellore, India
3 h-index
3 publications
72 citations
National Institute Of Technology Silchar
Silchar, India
3 h-index
7 publications
172 citations
Shandong University
Jinan, China
3 h-index
10 publications
177 citations

Jadavpur University
Kolkata, India
2 h-index
4 publications
171 citations

University of Padua
Padua, Italy
1 h-index
1 publications
38 citations

TU Wien
Vienna, Austria
1 h-index
1 publications
70 citations

Chinese Academy of Sciences
Beijing, China
1 h-index
1 publications
17 citations

Molde University College
Molde, Norway
1 h-index
1 publications
13 citations
1–8 of 38
5 publications · 152 citations
5
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3 publications · 148 citations
3
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2 publications · 44 citations
2
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2 publications · 33 citations
2
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1 publications · 17 citations
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