Straggle Modeling

Straggle Modeling is a computational method in ion implantation that predicts the statistical spread of ion ranges in a material due to random collisions, distinguished from other implantation models by its focus on characterizing the variance and spatial distribution of implanted ion profiles around their average penetration depth.

24

Publications

751

Citations

73

Authors

38

Institutions

Publications per year

2017–2026

4

Authors

73

  1. BS
    Bo-Rong Shi

    Shandong University, China

    3 publications · 53 citations

    3

    h-index

  2. BB
    Brinda Bhowmick

    National Institute Of Technology Silchar, India

    3 publications · 72 citations

    3

    h-index

  3. RS
    Rajesh Saha

    National Institute Of Technology Silchar, India

    3 publications · 72 citations

    3

    h-index

  4. KW
    Ke‐Ming Wang

    Shandong University, China

    3 publications · 53 citations

    3

    h-index

  5. KV
    K. Vanlalawmpuia

    National Institute Of Technology Silchar, India

    2 publications · 55 citations

    2

    h-index

1–5 of 73

Venues

  1. 5

    h-index

  2. IEEE Transactions on Electron Devices

    3 publications · 148 citations

    3

    h-index

  3. Applied Physics A

    2 publications · 44 citations

    2

    h-index

  4. Journal of Physics D Applied Physics

    2 publications · 33 citations

    2

    h-index

  5. Materials Science and Engineering B

    1 publications · 17 citations

    1

    h-index

1–5