IEEE Microwave and Guided Wave Letters · 1997 · 11 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsGainHeterojunction Bipolar TransistorsPower DensityPower Density EnhancementPower Electronics DevicesPower GainPower OutputWet Chemical Etching
In this work the device design and power performance of several AlInAs/InGaAs/InP double heterojunction bipolar transistors (DHBTs) are reported for 18 GHz. The power cells utilize a wet chemical etching technique to create a micro-airbridge base connection and to remove extrinsic collector material from beneath the base which both contribute to a reduced base-collector capacitance and improved f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> and power gain. For class B operation, the eight-finger 2 μm×30 μm power cells achieved 1.17-W output power, which indicates 4.88-W/mm emitter length, with 54% power-added efficiency (PAE) and 7.3-dB gain, This is believed to be the best combination of PAE and output power reported for this power density at K-band frequencies.
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Application of micro-airbridge isolation in high speed HBT fabrication
S. Tadayon, G. Metze, A. Cornfeld et al. · Electronics Letters · 1993 · 14 citations
Engineering, Electrical Engineering, Materials Engineering +17
High-power, high-efficiency K-band AlGaAs/GaAs heterojunction bipolar transistors
Hin-Fai Chau, D. Hill, R. Yarborough et al. · 2002 · 10 citations