IEEE Photonics Technology Letters · 1999 · 31 citations · 6 references
Photonics1.3-μM Algainas-inpEngineeringLaser SciencePhysicsPhotoluminescenceMultiple-quantum-well LasersApplied PhysicsLaser ApplicationsTemperature DependenceMqw LasersLaser MaterialQuantum Photonic DeviceOptoelectronicsHigh-power Lasers
We investigated experimentally the temperature dependence of the threshold current in 1.3-μm AlGaInAs-InP strained multiple-quantum-well lasers. We find that radiative recombination constitutes almost 100% of the threshold current up to 220 K and remains more than 70% even at 300 K. This results in a high characteristic temperature T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> .
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Chung-En Zah, R. Bhat, Bhadresh Pathak et al. · IEEE Journal of Quantum Electronics · 1994 · 337 citations
Low-threshold and high-temperature operation of InGaAlAs-InP lasers
T.R. Chen, P.C. Chen, J. Ungar et al. · IEEE Photonics Technology Letters · 1997 · 54 citations