Ultrahigh temperature and ultrahigh speed operationof1.3 µm strain-compensated AlGaInAs/InP uncooled laser diodes

Abstract

High performance 1.3 µm uncooled lasers with excellent high temperature and high speed characteristics are reported. A CW characteristic temperature of 105 K between 25 and 85°C, a maximum CW operating temperature above 170°C, and an intrinsic 3 dB modulation bandwidths estimated at ≥ 23 GHz at 25°C and 15 GHz at 85°C, have been achieved. These values are among the best obtained for 1.3 µm AlGaInAs laser devices.