IEEE Photonics Technology Letters · 1997 · 54 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor LasersStrain EngineeringWide Band Gap SemiconductorsDiode Laser Threshold CurrentHigh-temperature Device OperationLow-threshold Current LasersQuantum Well Laser DiodesQuantum Well LasersQuantum Well StructuresSemiconductor Laser DiodesThreshold Behavior
InGaAlAs-InP strained multiquantum-well ridge waveguide laser diodes operating at 1300 nm and exhibiting excellent performance have been fabricated. Threshold currents as low as 3.9 mA and T/sub 0/ values as high as 120 K have been measured. These values are the best reported thus far for this material system.
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Chung-En Zah, R. Bhat, Bhadresh Pathak et al. · IEEE Journal of Quantum Electronics · 1994 · 338 citations
High temperature operation of AlGaInAs/InP lasers
Chung-En Zah, R. Bhat, T.P. Lee · 2002 · 20 citations