Low-threshold and high-temperature operation of InGaAlAs-InP lasers

Abstract

InGaAlAs-InP strained multiquantum-well ridge waveguide laser diodes operating at 1300 nm and exhibiting excellent performance have been fabricated. Threshold currents as low as 3.9 mA and T/sub 0/ values as high as 120 K have been measured. These values are the best reported thus far for this material system.