Journal of Applied Physics · 1992 · 39 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser PhysicsOptical Properties Of SemiconductorsQuantum OptoelectronicsQuantum WellsSemiconductor LasersSemiconductor PhysicsCarrier ConfinementCharge Carrier DensityCurrent DensityDifferential GainLow-threshold Current LasersQuantum Well LasersStrain EffectsStrained Quantum Wells
We use an idealized band structure to compare the characteristics of tensile- and compressive-strained quantum-well lasers. We show that although the threshold carrier density increases as expected in tensile-strained lasers, both the radiative current density and differential gain can be comparable to or improved over compressively strained lasers.
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