IEEE Transactions on Electron Devices · 1994 · 21 citations · 13 references
EngineeringElectrical EngineeringPhysicsMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesHigh-temperature MaterialsNoise In Electronic DevicesNoise In Semiconductor DevicesHigh-temperature Device OperationHigh-temperature ElectronicsNoise FigureNoise Figure AnalysisNoise Figure MeasurementTemperature Dependence MeasurementTemperature Dependence Of I-v Curves
We present an experimental study of MESFET and conventional HEMT behavior as a function of temperature and limited to the range from 293 K to 393 K. We review the main phenomena appearing under high temperature conditions, and their effects on FET performances. The most important degradations concern, except the mobility in HEMT, the noise figure that can increase drastically between 293 K and 393 K. However, we present structures which seem to be less sensitive to temperature variations.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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