IEEE Electron Device Letters · 1995 · 59 citations · 13 references
Materials SciencePlasma Ion ImplantationElectrical EngineeringElectronic DevicesPlasma ImmersionEngineeringIon ImplantationPlasma ElectronicsApplied PhysicsSemiconductor Device FabricationIntegrated CircuitsSilicon On InsulatorThin Film TransistorsPlasma Processing
Both n- and p-channel polycrystalline silicon (poly-Si) thin film transistors (TFT's) have been hydrogenated using the plasma ion implantation (PII) technique. Significant improvements in device characteristics have been obtained. Because PII is capable of greater dose rates than plasma immersion, it allows for significantly shorter process times than other methods investigated thus far.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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