A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

Abstract

In this letter, a resistive random access memory based on Ni electrode/ <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$ \hbox{HfO}_{x}$</tex></formula> dielectric/ <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{n}^{+}$</tex></formula> Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high on/off resistance ratio <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$( &gt; \hbox{10}^{3})$</tex></formula> , good retention characteristics <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$( &gt; \hbox{10}^{5}\ \hbox{s}$</tex></formula> at <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$\hbox{150}\ ^{\circ}\hbox{C}$</tex> </formula> ), satisfactory pulse switching endurance <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$( &gt; \hbox{10}^{5}\ \hbox{cycles})$</tex></formula> , and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer.